Phosphorus redistribution in P-doped polycrystalline silicon/tantalum silicide system during high temperature sinteringLURYI, S; LIFSHITZ, N.Journal of applied physics. 1983, Vol 54, Num 10, pp 6058-6060, issn 0021-8979Article

Electrical microcharacterization of Si-TaSi₂ eutectic composite transistors by three-terminal electron-beam-induced conductivityLEVINSON, M; ROSSONI, P. G; DITCHEK, B. M et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 1011-1015, issn 0021-8979Article

Si-TaSi₂ in situ junction eutectic composite diodesDITCHEK, B. M; LEVINSON, M.Applied physics letters. 1986, Vol 49, Num 24, pp 1656-1658, issn 0003-6951Article

REACTIVE ION ETCHING OF TA-SILICIDE/POLYSILICON DOUBLE LAYERS FOR THE FABRICATION OF INTEGRATED CIRCUITSMATTAUSCH HJ; HASLER B; BEINVOGL W et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 15-22; BIBL. 17 REF.Article

Characteristics of ion-beam-synthesized tantalum silicide filmLIANG, J. H; RUAN, W. M.Surface and interface analysis. 2005, Vol 37, Num 2, pp 129-132, issn 0142-2421, 4 p.Conference Paper

Interfacial properties of thermally oxidized Ta₂Si on SiPKREZ-TOMAS, A; JENNINGS, M. R; MAWBY, P. A et al.Surface and interface analysis. 2008, Vol 40, Num 8, pp 1164-1167, issn 0142-2421, 4 p.Article

Characterization of thermal oxides grown on TaSi₂/polysilicon filmsPAWLIK, D; OPPOLZER, H; HILLMER, T et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 2, pp 492-499, issn 0734-211XArticle

Reactive ion beam etching of tuntalum silicide for VLSI applicationsBAUDRANT, A; PASSERAT, A; BOLLINGER, D et al.Solid state technology. 1983, Vol 26, Num 9, pp 183-187, issn 0038-111XArticle

Barrier-height measurements of tantalum silicide on siliconSHENG TENG HSU; JER-SHEN MAA.RCA review. 1985, Vol 46, Num 2, pp 163-169, issn 0033-6831Article

A TaSi_x barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconNEPPL, F; FISCHER, F; SCHWABE, U et al.Thin solid films. 1984, Vol 120, Num 4, pp 257-266, issn 0040-6090Article

REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTSMURARKA SP; FRASER DB; SINHA AK et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 474-482; BIBL. 16 REF.Article

DIREKTBEOBACHTUNG DES PRIMAERSCHRITTES DER OXIDATION VON MOSI₂-TASI₂-MISCHUNGEN. = OBSERVATION DIRECTE DU STADE INITIAL DE L'OXYDATION DES MELANGES MOSI₂-TASI₂SCHLICHTING J.1977; MATER. CHEM.; ITALY; DA. 1977; VOL. 2; NO 3; PP. 143-156; ABS. ANGL.; BIBL. 4 REF.Article

Structure of 'TaCo₄Si₃', a new silicide closely related to the Y₁₃Pd₄₀Sn₃₁ stannideVILASI, M; VENTURINI, G; STEINMETZ, J et al.Journal of alloys and compounds. 1995, Vol 227, Num 1, pp 32-36, issn 0925-8388Article

Photoluminescent properties of porous films of tantalum silicidesPARKHUTIK, V. P; MARTINEZ-DUART, J. M.Thin solid films. 1995, Vol 255, Num 1-2, pp 298-301, issn 0040-6090Conference Paper

Ellipsometry with Fourier transform spectrometer : an application to TaSi₂ filmsROÊSELER, A; MARABELLI, F; GUIZZETTI, G et al.Il Nuovo cimento. D. 1991, Vol 13, Num 2, pp 169-176, issn 0392-6737, 8 p.Article

The use of rapid thermal processing to control dopant redistribution during formation of tantalum and molybdenum silicide/n⁺ polysilicon bilayersCOOPER, C. B. III; POWELL, R. A.IEEE electron device letters. 1985, Vol 6, Num 5, pp 234-236, issn 0741-3106Article

Stress in sputtered TaSi_x films on polycrystalline siliconDRAPER, B. L.Applied physics letters. 1984, Vol 44, Num 9, pp 863-865, issn 0003-6951Article

STABLE TANTALUM SILICIDE SCHOTTKY BARRIER ON N-TYPE GALLIUM ARSENIDE EVALUATED AT ELEVATED TEMPERATURESTSENG WF; CHRISTOU A.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 330-332; BIBL. 5 REF.Article

An AES study of the room-temperature oxidation of TaSi_x after bombardment with Ar⁺ions of different energiesCLEMENT, M; SANZ, J. M; MARTINEZ-DUART, J. M et al.Surface and interface analysis. 1990, Vol 15, Num 7, pp 440-446, issn 0142-2421Article

Influence of slight deviations from TaSi₂ stoichiometry on the high-temperature stability of tantalum silicide/silicon contactsOPPOLZER, H; NEPPL, F; HIEBER, K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 4, pp 630-635, issn 0734-211XArticle

Characteristics of TaSi₂/poly-Si films oxidized in steam for VLSI applicationsDEBLASI, J. M; RAZOUK, R. R; THOMAS, M. E et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2478-2482, issn 0013-4651Article

Silicon epitaxial growth on Si-TaSi₂ eutectic composite substratesLEVINSON, M; TABASKY, M; SUNG, C et al.Applied physics letters. 1991, Vol 58, Num 24, pp 2815-2817, issn 0003-6951Article

Use of neural networks in modeling semiconductor manufacturing processes: an example for plasma etch modelingRIETMAN, E. A; LORY, E. R.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 4, pp 343-347, issn 0894-6507Article

Novel high voltage transistor fabricated using the in situ junctions in a Si-TaSi₂ entectic compositeDITCHEK, B. M; MIDDLETON, T. R; ROSSONI, P. G et al.Applied physics letters. 1988, Vol 52, Num 14, pp 1147-1149, issn 0003-6951Article

MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI₂/N⁺ POLY-SI GATESSINHA AK; LINDENBERGER WS; FRASER DB et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 490-495; BIBL. 14 REF.Article